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5-V Low-Drop Voltage Regulator
TLE 4263
Features
q q q q q q q q q q
Output voltage tolerance 2 % Low-drop voltage Very low standby current consumption Overtemperature protection Reverse polarity protection Short-circuit proof Settable reset threshold Watchdog Wide temperature range Suitable for use in automotive electronics
P-DSO-20-6
Type TLE 4263 G w New type
Ordering Code Package Q67006-A9095 P-DSO-20-6 (SMD) P-DSO-14-4 (SMD) P-DSO-14-4
w TLE 4263 GM Q67006-A9357
Functional Description TLE 4263 G is a 5-V low-drop voltage regulator in a P-DSO-20-6 SMD package. The maximum input voltage is 45 V. The maximum output current is more than 200 mA. The IC is short-circuit proof and incorporates temperature protection that disables the IC at overtemperature. The IC regulates an input voltage VI in the range of 6 V < VI < 45 V to VQrated = 5.0 V. A reset signal is generated for an output voltage of VQ < 4.5 V. This voltage threshold can be decreased to 3.5 V by external connection. The reset delay can be set externally by a capacitor. The integrated watchdog logic controls the connected microcontroller. The IC can be switched off via the inhibit input, which causes the current consumption to drop from 800 A to < 50 A.
Semiconductor Group
1
1998-11-01
TLE 4263
Dimensioning Information on External Components The input capacitor CI is necessary for compensating line influences. Using a resistor of approx. 1 in series with CI, the oscillating circuit consisting of input inductivity and input capacitance can be damped. The output capacitor is necessary for the stability of the regulating circuit. Stability is guaranteed at values 22 F and an ESR of 3 within the operating temperature range. For small tolerances of the reset delay the spread of the capacitance of the delay capacitor and its temperature coefficient should be noted. Pin Configuration (top view) TLE 4263 G
N.C. QRES GND GND GND DRES SRES
TLE 4263 GM
1 2 3 4 5 6 7 14 13 12 11 10 9 8
AEP02587
INH V GND GND GND VQ W
Semiconductor Group
2
1998-11-01
TLE 4263
Pin Definitions and Functions Pin 1, 2, 19, 13 3 4-7, 14-17 9 10 Symbol N.C. QRES GND DRES SRES Function Not connected Reset output; open-collector output connected to the output via a resistor of 30 k. Ground Reset delay; connected to ground with a capacitor. Reset threshold; for setting the switching threshold connect with a voltage divider from output to ground. If this input is connected to GND, reset is triggered at an output voltage of 4.5 V. Watchdog; positive edge triggered input for monitoring a microcontroller. 5-V output voltage; block to ground with a 22-F capacitor. Input voltage; block to ground directly at the IC with a ceramic capacitor. Inhibit; TTL-compatible, low-active input.
11 12 18 20
W
VQ VI
INH
Semiconductor Group
3
1998-11-01
TLE 4263
Circuit Description The control amplifier compares a reference voltage, which is kept highly accurate by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control as a function of the load current prevents any over-saturation of the power element. If the externally scaled down output voltage at the reset threshold input drops below 1.35 V, the external reset delay capacitor is discharged by the reset generator. If the voltage on the capacitor reaches the lower threshold VST, a reset signal is issued on the reset output and not cancelled again until the upper threshold VdT is exceeded. If the reset threshold input is connected to GND, reset is triggered at an output voltage of 4.5 V. A connected microcontroller is controlled by the watchdog logic. If pulses are missing, the reset output is set to low. The pulse sequence time can be set within a wide range with the reset delay capacitor. The IC can be switched at the TTL-compatible, low-active inhibit input. The IC also incorporates a number of internal circuits for protection against:
q q q
Overload Overtemperature Reverse polarity
11 Temperature Sensor Saturation Control and Protection Circuit Watchdog
Input
18 Control Amplifier Bandgap Reference
12
Output
Buffer Reset Generator
9 Reset Delay 3 Reset Output 10 Reset Threshold
Adjustment 20 Inhibit 4-7, 14-17 GND
AEB01100
Block Diagram
Semiconductor Group
4
1998-11-01
TLE 4263
Absolute Maximum Ratings Tj = - 40 to 150 C Parameter Symbol Limit Values min. Input Input voltage Input current Reset Output Voltage Current Reset Input Reset threshold Reset Delay Voltage Current Output Voltage Current Inhibit Voltage Watchdog Voltage Ground Current max. Unit Remarks
VI II
- 42 -
45 -
V -
- internally limited
VR IR
- 0.3 -
42 -
V -
- internally limited
VRE
- 0.3
6
V
-
Vd Id
- 0.3 -
42 -
V -
- internally limited
VQ IQ
- 0.3 -
7 -
V -
- internally limited
Ve
- 42
45
V
-
VW
- 0.3
6
V
-
IGND
- 0.5
-
A
-
Semiconductor Group
5
1998-11-01
TLE 4263
Absolute Maximum Ratings (cont'd) Tj = - 40 to 150 C Parameter Symbol Limit Values min. Temperature Junction temperature Storage temperature Operating Range Input voltage Junction temperature Thermal resistance junction-ambient junction-case max. Unit Remarks
Tj Tstg
- - 50
150 150
C C
- -
VI Tj Rth JA Rth JC
- - 40 - -
45 150 70 25
V C
- -
K/W soldered K/W -
Semiconductor Group
6
1998-11-01
TLE 4263
Characteristics VI = 13.5 V; Tj = 25 C; Ve > 3.5 V; (unless specified otherwise) Parameter Symbol Limit Values min. Normal Operation Output voltage typ. max. Unit Test Condition
VQ
4.90
5.00
5.10
V
5 mA IQ 150 mA; 6 V VI 28 V; - 40 C Tj 125 C 6 V VI 32 V; IQ = 100 mA; Tj = 100 C -
Output voltage
VQ
4.95
5.00
5.05
V
Output current Current consumption; Iq = Ii - IQ
IQ Iq Iq Iq Iq
200 - - - - - - - -
250 - 800 10 15 0.35 - 15 54
- 50
mA A
Ve = 0 IQ = 0 mA IQ = 150 mA IQ = 150 mA; Vi = 4.5 V IQ = 150 mA *) IQ = 5 mA to 150 mA VI = 6 V to 28 V; IQ = 150 mA fr = 100 Hz; Vr = 0.5 Vpp
1100 A 15 mA 20 mA 0.6 25 25 - V mV mV dB
Drop voltage Load regulation Supply-voltage regulation Ripple rejection Reset Generator Switching threshold Switching voltage Reset low voltage
VDr
VQ VQ
SVR
VRT VRE VR
4.2 1.28 -
4.5 1.35 0.10
4.8 1.42 0.40
V V V
VRE = 0 V VQ > 3.5 V IR = 1 mA
Note: The reset output is low within the range VQ = 1 V to VRT
*)
Drop voltage = Vi - VQ (measured when the output voltage has dropped 100 mV from the nominal value obtained at 13.5 V input)
Semiconductor Group
7
1998-11-01
TLE 4263
Characteristics (cont'd) VI = 13.5 V; Tj = 25 C; Ve > 3.5 V; (unless specified otherwise) Parameter Symbol Limit Values min. Saturation voltage Delay switching threshold Switching threshold Charge current Delay time Delay time Watchdog Discharge current Switching voltage Pulse time Inhibit Switching voltage Turn-OFF voltage Input current typ. 50 1.7 0.35 60 2.8 2 max. 100 2.1 0.55 80 - - mV V V A ms s Unit Test Condition
VC VdT VST Id td tt
- 1.5 0.2 40 - -
VQ < VRT
- - -
Cd = 100 nF Cd = 100 nF
ICd VCd TW
4.4 1.5 -
6.25 1.7 22.5
8.2 2.1 -
A V ms
VC = 1.5 V
-
Cd = 100 nF
Ve ON Ve OFF Ie
3.5 - 5
- - 10
- 0.8 15
V V A
IC turned on IC turned off
Ve = 5 V
Note: The reset output is low within the range VQ = 1 V to VRT
Semiconductor Group
8
1998-11-01
TLE 4263
Input 6 V ... 45 V KL 15 Reset to MC
18 470 nF 20
12 22 F
Output 100 k
TLE 4263G
9 100 nF 10
3 4 11 Watchdog from MC
56 k
AES01102
Application Circuit
1000 F
18 470 nF TLE 4263G
12 Q
22 F 5.6 k
e 20
V + Vr Ve VC
9
9R d
4
GND
11
10
VQ VR
Cd 100 nF
VW
V RE
V Dr = V - V Q *) Vr SVR = 20 log V Q
*) Outside Control Range
AES01101
Test Circuit
Semiconductor Group
9
1998-11-01
TLE 4263
V
V Q V RT
dV d = dt C d
Vcd
V dT V ST td tt
VR
Power-on-Reset
Overtemperature
Voltage Drop Undervoltage at Input
Secondary Spike
Load Bounce
AET01085
Time Response, Watchdog with High-Frequency Clock
Semiconductor Group
10
1998-11-01
TLE 4263
Reset Threshold versus Output Voltage
1.6 V V RE 1.4 1.2 1.0
AED01098
Switching Voltage VCd, VdT and VST versus Temperature
3.2 V V 2.8
AED01087
V = 13.5 V
2.4 2.0
V dT , V cd
V = 13.5 V
0.8 0.6 0.4 0.2 0
1.6 1.2 0.8
V ST
0.4 0 -40
0
1
2
3
4V5 VQ
0
40
80
120 C 160 Tj
Reset Switching Threshold versus Temperature
1.6 V V RE 1.4 1.2 1.0 0.8 0.6
AED01088
Current Consumption of Inhibit versus Temperature
12
AED01089
e
A
10
8
Ve = 5 V
6
4
0.4 0.2 0 -40
2
0
40
80
120 C 160 Tj
0 -40
0
40
80
120 C 160 Tj
Semiconductor Group
11
1998-11-01
TLE 4263
Drop Voltage versus OutputCurrent
800 mV V Dr 700 600 500 400 300 200 100 0
AED01094
Current Consumption versus Output Current
32 mA q 28 24 20
AED01095
T j = 125 C 25 C
16 12 8 4
V = 13.5 V
0
50
100
150
200
mA Q
300
0
0
50
100
150
200
mA Q
300
Current Consumption versus Input Voltage
30
AED01096
Output Voltage versus Input Voltage
12
AED01097
q
mA 25
VQ
V 10
20
R L = 25
8
15
6
R L = 25
10
4
5
2
0
0
10
20
30
40 V 50 V
0
0
2
4
6
8 V 10 V
Semiconductor Group
12
1998-11-01
TLE 4263
Charge Current and Discharge Current versus Temperature
80 A 70 60 50 40 30 20 10 0 -40
AED01104
Output Voltage versus Temperature
5.2
AED01090
d
VQ
V 5.1
V = 13.5 V V C = 1.5 V
5.0
Ve = 13.5 V
4.9
4.8
Cd
4.7
0
40
80
120 C 160 Tj
4.6 -40
0
40
80
120 C 160 Tj
Pulse Time versus Temperature
40 ms T W 35 30 25 20 15 10 5 0 -40
AED01106
Input Response
AED01092
_ t r = t f ~ 1 s
V
2 V 1 0
V = 13.5 V C d = 100 nF
40 mV V Q 20 0 -20 -40 -10 40 s 50
C Q = 22 F
0
40
80
120 C 160 Tj
0
10
20
30
t
Semiconductor Group
13
1998-11-01
TLE 4263
Output Current versus Input Voltage
300
AED01091
Load Response
Q
mA 250
T j = 25 C
295 mA Q 150 5
AED01093
200
150
200 mV V Q 100 0
100
C Q = 22 F
50
-100 -200 -10 40 s 50
0
0
10
20
30
40 V 50 V
0
10
20
30
t
Semiconductor Group
14
1998-11-01
TLE 4263
Package Outlines P-DSO-20-6 (Plastic Dual Small Outline)
2.65 max
0.35 x 45
2.45 -0.2
0.2 -0.1
1.27 0.35 +0.15 2) 20 0.2 24x 11 0.1
0.4 +0.8 10.3 0.3
GPS05094
1 12.8 1) 10 -0.2 Index Marking 1) Does not include plastic or metal protrusions of 0.15 max per side 2) Does not include dambar protrusion of 0.05 max per side
Weight approx. 0.6 g
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 15
0.23 +0.0 9 8 ma x
7.6 -0.2 1)
Dimensions in mm 1998-11-01
TLE 4263
P-DSO-14-1 (Plastic Dual Small Outline)
0.35 x 45
1.75 max 1.45 -0.2
0.19 +0.06
0.2 -0.1
4 -0.2 1)
1.27 0.35 +0.15 2) 14 0.1 0.2 14x 6 0.2 8 0.4 +0.8
1 7 8.75 -0.21) Index Marking 1) Does not include plastic or metal protrusion of 0.15 max. per side 2) Does not include dambar protrusion of 0.05 max. per side
GPS05093
Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information". SMD = Surface Mounted Device Semiconductor Group 16
8 max.
Dimensions in mm 1998-11-01

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